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Proceedings Paper

Efficient approach for experimental characterization of resist profile in electron-beam-exposed resists
Author(s): Nikolina Atanassova Madjarova
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Paper Abstract

Resist process control in high resolution lithography can be achieved by understanding the exposure and development characteristics of the resist. This paper presents a method to estimate the expected resist profile in electron beam lithography using characteristics of the developing process such as average develop rate and successive layers dry etching rate. Plotting the average develop rate versus the exposure doses are obtained curves with specific shape, which present the resist response for given experimental conditions. This response for positive electron resists could be very near to the optimum curve expressed with so called "threshold" develop rate. For negative electron resist and electron exposed positive photoresist an optimum resist response could be obtained using stepwise exposure. The variation of the oxygen plasma etching rate into the depth of the electron exposed negative resist showed the dependance on the exposure doses and different ways to receive dose. The top edge of the resist is considerably more stable with respect to variation in dose and the way to receive it than the bottom edge. The biggest change in etching rate is seen below 20% remaining resist thickness. The experimental results suggest an idea for the repeatability of the expected resist profile after the exposure with different doses.

Paper Details

Date Published: 1 June 1992
PDF: 12 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59776
Show Author Affiliations
Nikolina Atanassova Madjarova, Institute of Microelectronics (Bulgaria)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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