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Proceedings Paper

Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist
Author(s): Seong-Ju Kim; Byung-Sun Park; Haiwon Lee
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Paper Abstract

One:one alternating poly(p-trimethylgermylstyrene sulfone)s were obtained by tert- butylhydroperoxide initiated copolymerization of p-trimethylgermylstyrene with sulfur dioxide (SO2) at T < -60 degree(s)C. The molecular weight and polydispersity of the polysulfones were in the range of Mn equals 0.5 approximately 20 X 106 and Mw/Mn equals 1.8 approximately 5, respectively. The temperature of initial decomposition in nitrogen was 196 degree(s)C. Maximum UV absorption ((lambda) max) of the polysulfone was at 228 nm ((epsilon) max equals 16740 1/molcm of monomer unit). The polysulfone was found to be positive acting resists sensitive to x-ray ((lambda) c equals 18.5 angstrom) and electron beam.

Paper Details

Date Published: 1 June 1992
PDF: 9 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59767
Show Author Affiliations
Seong-Ju Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Byung-Sun Park, Electronics and Telecommunications Research Institute (South Korea)
Haiwon Lee, Korea Research Institute of Chemical Technology (South Korea)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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