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Proceedings Paper

Quarter-micron deep-UV lithography with silylation process
Author(s): Masayuki Endo; Takahiro Matsuo; Kazuhiko Hashimoto; Masaru Sasago; Noboru Nomura
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Paper Abstract

We have developed a new quarter-micron lithography technology. This technology is characterized as a KrF excimer laser lithography combined with silylation process. We found that the high potential of resolution improvement with KrF excimer laser lithography can be enhanced using the surface imaging method. In this paper, the optimization and characteristics of silylation process are discussed and the hyper fine patterns of quarter-micron are shown using our novel technique.

Paper Details

Date Published: 1 June 1992
PDF: 5 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59766
Show Author Affiliations
Masayuki Endo, Matsushita Electric Industrial Co., Ltd. (Japan)
Takahiro Matsuo, Matsushita Electric Industrial Co., Ltd. (Japan)
Kazuhiko Hashimoto, Matsushita Electric Industrial Co., Ltd. (Japan)
Masaru Sasago, Matsushita Electric Industrial Co., Ltd. (Japan)
Noboru Nomura, Matsushita Electric Industrial Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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