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Proceedings Paper

In-situ IR study of the kinetics of silylation
Author(s): Dan V. Nicolau; Gheorghita Jinescu; Florin Fulga
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Paper Abstract

The paper deals with the in-situ spectrophotometric study of the silylation in order to assess possible mechanisms. The results are used for proving that several pathways can be used for obtaining the sharp concentration front of silicon, a characteristic feature of Case II diffusion. A short review of up-to-date papers concerning the possible mechanisms of diffusion in polymers and their modeling is presented. The results of IR spectrophotometric studies prove that the most important feature observed during silylation, i.e., the linear relationship between silicon uptake and the square root of time, and the steep profile of the silicon concentration front, can be explained in the frame of the classical theory of mass transfer accompanied by instantaneous chemical reactions. A critical discussion regarding the possible relationships for the diffusion coefficient of the silylating agent is presented.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59765
Show Author Affiliations
Dan V. Nicolau, ICCE and Polytechnic Institute Bucharest (Romania)
Gheorghita Jinescu, ICCE and Polytechnic Institute Bucharest (Romania)
Florin Fulga, ICCE and Polytechnic Institute Bucharest (Romania)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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