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Proceedings Paper

Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist
Author(s): John L. Sturtevant; Steven J. Holmes; Paul A. Rabidoux
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Paper Abstract

In the processing of chemically amplified resist systems, two `dose' parameters must be considered. The exposure dose dictates the amount of photoacid generated, and the thermal dose that is administered during the post-exposure bake (PEB) governs the extent to which the resin is chemically transformed by the acid. An Arrhenius relationship exists between these two dose variables, and the magnitude of the effective activation energy determines the degree of PEB temperature control required for a particular linewidth budget. PEB characteristics are presented for a chemically amplified positive-tone DUV resist used by IBM in the manufacture of 0.5 micrometers 16 Mb DRAMs. The effect of PEB temperature and time on resist sensitivity, contrast, resolution, and process latitude is presented. The influence of exposure and thermal dose on the chemical contamination effect is also discussed.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59753
Show Author Affiliations
John L. Sturtevant, IBM Corp. (United States)
Steven J. Holmes, IBM Corp. (United States)
Paul A. Rabidoux, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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