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Proceedings Paper

Dry development of silylated resist: influence of substrate temperature
Author(s): Olivier P. Joubert; Claude Rouyer; Michel J. Pons; Andre P. Weill; Patrick Jean Paniez
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Paper Abstract

During the last few years, silylation processes have been extensively studied. In particular, the mechanisms of silicon incorporation in the resist have been discussed. However, the importance of the dry etching step, which allows the image transfer in the resist, has often been neglected. In this paper it is shown that under standard dry etching conditions, the slight increase in the substrate temperature leads to the liquefaction of the silylated area which then flows down onto the sidewalls of the patterns.

Paper Details

Date Published: 1 June 1992
PDF: 12 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59749
Show Author Affiliations
Olivier P. Joubert, LETI/CEA (France)
Claude Rouyer, LETI/CEA (France)
Michel J. Pons, CNET-CNS (France)
Andre P. Weill, CNET-CNS (France)
Patrick Jean Paniez, CNET-CNS (France)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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