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Proceedings Paper

Pattern transfer capabilities of CAMP deep-UV resist
Author(s): Ivan S. Daraktchiev; Dirk Goossens; P. Matthijs; Mark Thirsk; Andrew J. Blakeney; Omkaram Nalamasu; May Cheng
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Paper Abstract

The work reported here is concerned with using a chemically amplified, positive tone, alkaline developable photoresist for patterning 0.3 - 0.5 (mu) features by exposing with monochromatic light at (lambda) equals 248 nm. More specifically, this class of materials employs tertiarybutoxycarbonyl (t-BOC) protected polyhydroxystyrenesulfone polymer and typically a nitrobenzyl ester photo acid generator, usually referred to as the CAMP resist. Since the lithographic performance of these materials has been already reported, the emphasis of this work falls on the pattern transfer and especially the dry etching/resist stripping steps. As a matter of reference, only an example of the lithographic performance is shown, indicating the starting point for the plasma etching work.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59748
Show Author Affiliations
Ivan S. Daraktchiev, OCG Microelectronic Materials NV (Belgium)
Dirk Goossens, OCG Microelectronic Materials NV (Belgium)
P. Matthijs, OCG Microelectronic Materials NV (Belgium)
Mark Thirsk, OCG Microelectronic Materials NV (Belgium)
Andrew J. Blakeney, OCG Microelectronic Materials, Inc. (United States)
Omkaram Nalamasu, AT&T Bell Labs. (United States)
May Cheng, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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