Share Email Print

Proceedings Paper

Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data
Author(s): Stewart A. Robertson; J. Tom M. Stevenson; Robert J. Holwill; Steven G. Hansen; Charles E. Ebersole; Mark Thirsk; Ivan S. Daraktchiev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper describes how absolute thickness data obtained from a track development rate monitor (TDRM) can be used to quantify resist dissolution in a very accurate manner. There is a demonstration of how bulk dissolution rate, surface inhibition, and post exposure bake (PEB) effects can be characterized. An empirical surface inhibition model is derived and accompanied by a description of how the required input parameters can be extracted from TDRM output. Three different development processes (immersion, continuous spray, and puddle) are fully characterized for two separate resist systems and the observed similarities and differences are discussed.

Paper Details

Date Published: 1 June 1992
PDF: 13 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59747
Show Author Affiliations
Stewart A. Robertson, Univ. of Edinburgh (United Kingdom)
J. Tom M. Stevenson, Univ. of Edinburgh (United Kingdom)
Robert J. Holwill, Univ. of Edinburgh (United Kingdom)
Steven G. Hansen, OCG Microelectronic Materials, Inc. (United States)
Charles E. Ebersole, OCG Microelectronic Materials, Inc. (United States)
Mark Thirsk, OCG Microelectronic Materials NV (Belgium)
Ivan S. Daraktchiev, OCG Microelectronic Materials NV (Belgium)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

© SPIE. Terms of Use
Back to Top