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Influence of mask induced polarization effects on a pattern printability
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Paper Abstract

Through ArF immersion lithography a road towards increased optical resolution at the 193nm wavelength has been opened. According to recently proposed roadmaps, ArF immersion lithography will be used for 65nm and 45nm technology nodes. Consequently, keeping the same 4x optical demagnification factor, the dimensions on mask scale down to wavelength values when entering these nodes. Moreover CD control becomes tighter and approaches values of 2-3nm. At such conditions, topography on mask, its type and materials cannot be ignored anymore while evaluating image formation either for design analysis or OPC adjustments. The objective of this paper is to analyze the influence of mask topography on imaging. The mask topography influences polarization state and diffraction efficiencies, which are determine further image formation. Therefore these parameters and their dependence on mask type, materials and pitches are of the major concern during the analyses. We analyze the process latitude and CD variations through pitch. The complete rigorous analysis shows improved process windows with the increase of feature aspect ratio and at the same time a large through pitch CD deviation compared to the conventional Kirchhoff diffraction model.

Paper Details

Date Published: 12 May 2005
PDF: 11 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); doi: 10.1117/12.597438
Show Author Affiliations
Yuri Aksenov, Philips Research Leuven (Belgium)
Peter Dirksen, Philips Research Leuven (Belgium)
Xiuhong Wei, Philips Research Labs. (Netherlands)
Peter Zandbergen, Philips Research Leuven (Belgium)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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