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Proceedings Paper

Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule
Author(s): Kazunori Kato; Kazuo Taira; Toshihiko Takahashi; Kenji Yanagihara
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Paper Abstract

Effective parameters of a DESIRE process on lithographic performances were studied. It is known that the silylation profile affects a resist pattern profile after development. Here, the relation between silylation profile and resist performances such as depth of focus (DOF), pattern fidelity, and resolution limit were investigated through functional analysis of exposure, cross-linking, and silylation itself. Based on this, new excimer resists were developed and remarkable large DOF and high resolution were realized. In this paper, we describe a total scheme of silylation and resist performance of novel PLASMASK resist at sub-half to quarter micron rule pattern by using the newest lithographic tools.

Paper Details

Date Published: 1 June 1992
PDF: 14 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59741
Show Author Affiliations
Kazunori Kato, Japan Synthetic Rubber Co., Ltd. (Japan)
Kazuo Taira, Japan Synthetic Rubber Co., Ltd. (Japan)
Toshihiko Takahashi, Japan Synthetic Rubber Co., Ltd. (Japan)
Kenji Yanagihara, Japan Synthetic Rubber Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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