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Proceedings Paper

Aberration retrieval for high-NA optical systems using the extended Nijboer-Zernike theory
Author(s): Peter Dirksen; Joseph J.M. Braat; Augustus J.E.M. Janssen; Ad Leeuwestein
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Paper Abstract

Previously, we have given a detailed description of the so-called Extended Nijboer-Zernike approach and its application to aberration measurements of the optical projection system in a wafer scanner in the case of a low or medium high-NA system. The Extended Nijboer-Zernike theory provides an analytical description of the through-focus intensity point-spread function in the presence of lens aberrations and defocus. Taking the Extended Nijboer-Zernike description for the electric field components in the case of a high-NA optical system as a starting point, we present an approach to aberration retrieval when the NA is very high. The experimental procedure involves the analysis of a focus-exposure matrix. The differences between aberration retrieval using the low-NA scalar model and the high-NA full vectorial model are discussed. The mathematical framework is shown and the experimental procedure to extract aberrations for a high-NA lens is demonstrated on modern 193 nm wafer scanners.

Paper Details

Date Published: 12 May 2004
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.597406
Show Author Affiliations
Peter Dirksen, Philips Research Leuven (Belgium)
Joseph J.M. Braat, Delft Univ. of Technology (Netherlands)
Augustus J.E.M. Janssen, Philips Research Labs. (Netherlands)
Ad Leeuwestein, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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