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Proceedings Paper

Surface-imaged silicon polymers for 193-nm excimer laser lithography
Author(s): Roderick R. Kunz; Mark W. Horn; Russell B. Goodman; Patricia Anne Bianconi; David Alastair M Smith; J. R. Eshelman; Gregory M. Wallraff; Robert D. Miller; Eric J. Ginsburg
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Paper Abstract

A negative-tone surface-imaged resist process based upon the area-selective oxidation of silicon-backbone polymers is described. A bromine-based plasma is the resist developer, where the oxidized polymer inhibits the bromine-initiated etching to yield a negative-tone image. Using either polysilanes or polysilynes, resist sensitivities in the range of 50 mJ/cm2 have been obtained and resolutions to 0.2 micrometers achieved. Photosensitizers can be added to further accelerate the photo-oxidation, resulting in sensitivities less than 20 mJ/cm2. The latent image formation is reciprocal with respect to fluence in the range 0.05 to 1.5 mJ/cm2 per pulse and with respect to repetition rate. The photo-oxidation contrast is one, whereas the bromine-based etch step can have a contrast as high as 5. In addition, the exposure, focus, and development latitudes have all been characterized and compared to other surface-imaged 193 nm resist systems.

Paper Details

Date Published: 1 June 1992
PDF: 9 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59738
Show Author Affiliations
Roderick R. Kunz, Lincoln Lab./MIT (United States)
Mark W. Horn, Lincoln Lab./MIT (United States)
Russell B. Goodman, Lincoln Lab./MIT (United States)
Patricia Anne Bianconi, The Pennsylvania State Univ. (United States)
David Alastair M Smith, The Pennsylvania State Univ. (United States)
J. R. Eshelman, The Pennsylvania State Univ. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Robert D. Miller, IBM Almaden Research Ctr. (United States)
Eric J. Ginsburg, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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