Share Email Print

Proceedings Paper

High-speed 2D VCSEL arrays at 990nm for short reach interconnects
Author(s): Ashish Tandon; Chao-Kun Lin; Kostadin Djordjev; Scott Corzine; Michael Tan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have demonstrated high density, 2D (4x12) VCSEL arrays operating at an aggregate data rate of over 480Gb/s in an aerial density of 1400x3750 μm2, or 9.14 Tbs/cm2. These flip-chip, bottom-emitting 990nm VCSELs have low drive voltage, low electrical parasitics, improved thermal impedance and 2D scalability over their wire-bonded top emitting counterparts. Excellent high speed performance was obtained through the use of 1) compressively strained InGaAs MQW active region 2) low parasitic capacitance oxide-confined VCSEL structures and 3) low series resistance, high index contrast AlGaAs/GaAs mirrors. 10Gb/s operation was obtained with low operating current density of ~6kA/cm2 at 70C. Our best results to date have achieved data rates greater than 12.5Gb/s @70C at a current density less than 10kA/cm2. The device results show good agreement with theoretically calculated/simulated values. This work was partially supported by DARPA under contract MDA972-03-3-0004.

Paper Details

Date Published: 14 March 2005
PDF: 7 pages
Proc. SPIE 5737, Vertical-Cavity Surface-Emitting Lasers IX, (14 March 2005); doi: 10.1117/12.597343
Show Author Affiliations
Ashish Tandon, Agilent Labs. (United States)
Chao-Kun Lin, Agilent Labs. (United States)
Kostadin Djordjev, Agilent Labs. (United States)
Scott Corzine, Agilent Labs. (United States)
Michael Tan, Agilent Labs. (United States)

Published in SPIE Proceedings Vol. 5737:
Vertical-Cavity Surface-Emitting Lasers IX
Chun Lei; Kent D. Choquette, Editor(s)

© SPIE. Terms of Use
Back to Top