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Proceedings Paper

Material design and evaluation of nanocomposite resist for next generation lithography
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Paper Abstract

A chemically amplified resist, Poly(4-hydroxystyrene-co-tertiarybutylmethacrylate-co-MethacrylphenylPOSS) with different Polyhedral oligosilsesquioxane (POSS) loading has been synthesized by free radical polymerization. The incorporation of POSS units into the resist matrix has been found to affect their RIE resistance in O2 plasma. The thickness of the films were monitored using ellipsometry at various etch intervals to determine the etch rate and selectivity. It was observed that etch rate of these nanocomposite resists were comparable to the standard PHOST and Novolac based resists. HRTEM and HAADF studies showed that the POSS units exhibit a morphology of rectangular crystallites that are responsible for the plasma etch behavior. We have obtained 120 nm (1:1) (Line/Space) feature using 248 nm lithography. The protecting group, tertiary butyl protecting group exhibits acceptable outgassing. Using e-beam lithography, 70nm pattern feature was obtained.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.597308
Show Author Affiliations
Kenneth E. Gonsalves, Univ. of North Carolina at Charlotte (United States)
Muthiah Thiyagarajan, Univ. of North Carolina at Charlotte (United States)
Kim Dean, SEMATECH (United States)
Patricia Santiago, Univ. Nacional Autonoma de Mexico (Mexico)
L. Rendon, Univ. Nacional Autonoma de Mexico (Mexico)
Augustin Jeyakumar, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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