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Proceedings Paper

A methodology to calibrate line-end gauge position for better modeling performance
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Paper Abstract

Model-Based Optical Proximity Correction has become a standard practice for 130nm technology node and below. A physically realistic model that is adequately calibrated contains the information that can be used for process predictions and analysis of a given process. But there still are some unknown physics in the process, that’s why we need to recommend some methodologies for implementing calibrated models for low k1 process. On the other hand, line-end is one of the most difficult 2-D configurations to model and simulate accurately because of intrinsic localized lower/higher threshold compared with 1-D structures. This problem is quite unavoidable especially when people keep constant threshold modeling approach. The objective of this study is to provide a methodology for different line-end modeling gauge types and positions, and still maintain constant threshold modeling. Here, we choose a 0.7NA ArF process empirical dataset for modeling experiments. Among all gauge types and modeling algorithms, the off-center 10% of main feature line-width gauge type with constant threshold model has overall best performance due to: 1)Quick convergent model fitting time; 2)Best common fitting, simulation and correction results; 3)More stable than variable-threshold model.

Paper Details

Date Published: 12 May 2004
PDF: 9 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.597284
Show Author Affiliations
Chi-Yuan Hung, Semiconductor Manufacturing International Corp. (China)
Ching-Heng Wang, Semiconductor Manufacturing International Corp. (China)
Qing-Wei Liu, Semiconductor Manufacturing International Corp. (China)

Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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