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Proceedings Paper

A novel patterning method of low-resistivity metals
Author(s): Chang-Ho Noh; Jin-Young Kim; Ho-Chul Lee; Ok-Chae Hwang; Sung-Heon Cho; Ki-Yong Song; Jong-Min Kim
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Paper Abstract

A new metal patterning process using photocatalyst was developed to reduce the number of chemical processing steps and to obtain high resolution. Films of amorphous TiO2 and water-soluble polyvinyl alcohol were used as photocatalytic layers. UV light was illuminated through a photomask onto the photocatalytic layers. Pd(II) in an aqueous solution was reduced to Pd(0) by the exposed TiO2 and deposited on the exposed regions. Selective electroless Ni/Cu plating on the Pd patterns showed high resolution metal patterns. Process parameters such as exposure dose and postexposure time delay were optimized to confirm the feasibility of this method. It was established that high resolution metal patterns of low resistivity with good adhesion were formed only at a small process steps without using high cost materials and equipments. Selective growth of carbon nanotubes on the Ni patterns was carried out by plasma-enhanced chemical vapor deposition. It’s expected that this methods will have several benefits for fabricating the microelectronic devices, especially in the large size flat panel display.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.597281
Show Author Affiliations
Chang-Ho Noh, Samsung Advanced Institute of Technology (South Korea)
Jin-Young Kim, Samsung Advanced Institute of Technology (South Korea)
Ho-Chul Lee, Samsung Advanced Institute of Technology (South Korea)
Ok-Chae Hwang, Samsung Advanced Institute of Technology (South Korea)
Sung-Heon Cho, Samsung Advanced Institute of Technology (South Korea)
Ki-Yong Song, Samsung Advanced Institute of Technology (South Korea)
Jong-Min Kim, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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