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Proceedings Paper

Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
Author(s): Yuko Kaimoto; Koji Nozaki; Satoshi Takechi; Naomichi Abe
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Paper Abstract

We designed a new chemical amplification resist for ArF and KrF excimer lithography. The resist comprises alicyclic the copolymer of adamantylmethacrylate and tert-butylmethacrylate, with triphenylsulfonium hexafluoroantimonate as a photo acid generator. This resist is highly transparent at KrF and ArF wavelengths because it has no aromatic and its dry etch resistance is comparable to that of a Novolac resist. The lithographic performance of this resist was evaluated using a KrF excimer laser stepper. A less than 0.5 micron line and space pattern profile was obtained with our resist.

Paper Details

Date Published: 1 June 1992
PDF: 8 pages
Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); doi: 10.1117/12.59727
Show Author Affiliations
Yuko Kaimoto, Fujitsu Ltd. (Japan)
Koji Nozaki, Fujitsu Ltd. (Japan)
Satoshi Takechi, Fujitsu Ltd. (Japan)
Naomichi Abe, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 1672:
Advances in Resist Technology and Processing IX
Anthony E. Novembre, Editor(s)

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