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Proceedings Paper

High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization
Author(s): Stanley Tsao; Kan Mi; John Szafraniec; Wei Zhang; Ho-chul Lim; Bijan Movaghar; Manijeh Razeghi
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Paper Abstract

We report an InGaAs/InGaP/GaAs quantum dot infrared photodetector grown by metalorganic chemical vapor deposition with detectivity of 1.3x1011 cmHz1/2/W at 77K and 1.2x1010 cmHz1/2/W at 120K. Modeling of the Quantum dot energy levels showed us that increased photoresponse could be obtained by doping the quantum dots to 4 electrons per dot instead of the usual 2 electrons per dot. This happens because the primary photocurrent transition is from the first excited state to a higher excited state. Increasing the quantum doping in our device yielded significant responsivity improvement and much higher detectivity as a result. This paper discusses the performance of this higher doping device and compares it to our previously reported device with lower doping.

Paper Details

Date Published: 25 March 2005
PDF: 8 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597208
Show Author Affiliations
Stanley Tsao, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
John Szafraniec, Northwestern Univ. (United States)
Wei Zhang, Northwestern Univ. (United States)
Ho-chul Lim, Northwestern Univ. (United States)
Bijan Movaghar, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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