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Proceedings Paper

Novel CD-SEM calibration reference patterned by EB cell projection lithography
Author(s): Yoshinori Nakayama; Satoshi Gonda; Ichiko Misumi; Tomizo Kurosawa; Jun-ichiro Kitta; Hisaichi Mine; Katsuhiro Sasada; Shozo Yoneda; Takeshi Mizuno
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Paper Abstract

A silicon grating pattern with a 100-nm pitch size for calibration of electron-beam (EB) metrology systems was formed by EB cell projection writing using a grating stencil mask and dry etching. According to the evaluation results from a critical-dimension scanning electron microscope (CD-SEM), the uniformity of the pitch size in a 1.8 x 1.8-mm chip was smaller than 3 nm within 3 sigma in the x and y directions. The obtained 100-nm pitch size was calibrated by DUV laser diffraction. The difference between designed 100-nm pitch size and the calibrated pitch size by DUV laser diffraction was smaller than 0.1 nm. It is thus concluded that more precise calibration of the CD-SEM using this 100-nm pitch grating is expected compared with conventional calibration using 240-nm pitch reference grating fabricated by laser-interferometer lithography and anisotropic chemical etching.

Paper Details

Date Published: 10 May 2005
PDF: 12 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.597165
Show Author Affiliations
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Satoshi Gonda, National Metrology Institute of Japan-AIST (Japan)
Ichiko Misumi, National Metrology Institute of Japan-AIST (Japan)
Tomizo Kurosawa, National Metrology Institute of Japan-AIST (Japan)
Jun-ichiro Kitta, Japan Quality Assurance Organization (Japan)
Hisaichi Mine, Japan Quality Assurance Organization (Japan)
Katsuhiro Sasada, Hitachi High-Technologies Corp. (Japan)
Shozo Yoneda, Hitachi High-Technologies Corp. (Japan)
Takeshi Mizuno, Hitachi Science Systems, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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