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Proceedings Paper

High performance LWIR type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays
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Paper Abstract

Dark current has become a significant limiting factor for the development of the Type II InAs/GaSb superlattices technology. Experimental results showed that at liquid nitrogen temperature the dominating dark current under reverse bias is the generation-recombination current before the tunneling current turns on. Recent research on the source of the dark current indicated that the Auger recombinations might play a very important role in the superlattice diode dark current. With proper design of the superlattice structure, we have been able to reduce the dark current several orders of magnitude in the LWIR range. The superlattice diode performance was also improved dramatically. Infrared focal plane arrays based on these superlattices will also be discussed.

Paper Details

Date Published: 25 March 2005
PDF: 7 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597141
Show Author Affiliations
Yajun Wei, Northwestern Univ. (United States)
Andrew Hood, Northwestern Univ. (United States)
Aaron Gin, Northwestern Univ. (United States)
Vahid Yazdanpanah, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Meimei Tidrow, Missile Defense Agency (United States)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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