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Proceedings Paper

High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD
Author(s): Wei Zhang; Ho-Chul Lim; Maho Taguchi; Stanley Tsao; John Szafraniec; Bijan Movaghar; Manijeh Razeghi; Meimei Tidrow
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Paper Abstract

Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared detection. Quantum dot infrared photodetectors (QDIPs) have been predicted to have better performance than QWIPs including higher operation temperature and normal incidence detection. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD). The device structures consist of multiple stacks of InAs quantum dots with InP barriers. High detectivities in the range of 1010cmHz1/2/W were obtained at 77K. The measurements at higher temperatures show better temperature dependent performance than QWIP. However, the performances of QDIPs are still far from the expected. One of the reasons is the low quantum efficiency due to the low fill factor of quantum dots layer. Resonant cavity enhanced QDIP has been studied to increase the quantum efficiency. Different schemes of mirrors using free carrier plasma and distributed Bragg reflector are discussed.

Paper Details

Date Published: 25 March 2005
PDF: 8 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597139
Show Author Affiliations
Wei Zhang, Northwestern Univ. (United States)
Ho-Chul Lim, Northwestern Univ. (United States)
Maho Taguchi, Northwestern Univ. (United States)
Stanley Tsao, Northwestern Univ. (United States)
John Szafraniec, Northwestern Univ. (United States)
Bijan Movaghar, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Meimei Tidrow, Missile Defense Agency (United States)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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