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Proceedings Paper

Tailoring thermal property of ArF resists resins through monomer structure modification for sub-70-nm contact hole application by reflow process
Author(s): Ichiki Takemoto; Youngjoon Lee; Yusuke Fuji; Isao Yoshida; Kazuhiko Hashimoto; Takayuki Miyagawa; Satoshi Yamaguchi; Kenji Takahashi; Shinji Konishi
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Paper Abstract

Numerous resolution enhancement techniques have been introduced over the past few years as the design rule decreases rapidly. Among them are thermal reflow, SAFIER and RELACS just to name a few. Resist reflow is one of the simplest processes with a minimum process modification that only requires an additional baking step at or above its glass transition temperature after the contact holes have been developed. Since most of the methacrylic-based ArF resins have Tgs in vicinity of their thermal decomposition temperature, it is not desirable to expose the resins near Tg for a prolonged time. An approach to construct a resin that is physically or thermally viable, yet chemically stable is necessary and the easiest way of achieving this goal is to bring down Tg of the resin significantly so that there would be enough working space between thermal decomposition and glass transition. Out of several conceivable ways to lower the Tgs such as employing acrylic polymers, COMA type polymers etc., we have chosen to maintain the methacrylic platform because of its superior resolution capability. Our design strategy is to work on the pendent groups of methacrylic monomers to make polymer matrix more flexible. Thus, the incorporation of a more flexible unit, such as 2-methyl-2-adamantyloxycarbonylmethyl methacrylate, in our existing copolymer system reduced Tg almost by 30°C. In addition to its thermal property tuning ability, the resist sensitivity also has increased, presumably due to the out-stretched position of an acid labile protecting group for easy access of incoming acid molecules. Our newly developed resists based on the design concept showed a good C/H pattern profile and improved LER by reflow process at sub-70 nm node. We will discuss our newly designed materials in this paper in terms of material properties, resist characteristics and lithographic performances in relation to reflow processes.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.597135
Show Author Affiliations
Ichiki Takemoto, Sumitomo Chemical Co. (Japan)
Youngjoon Lee, Sumitomo Chemical Co. (Japan)
Yusuke Fuji, Sumitomo Chemical Co. (Japan)
Isao Yoshida, Sumitomo Chemical Co. (Japan)
Kazuhiko Hashimoto, Sumitomo Chemical Co. (Japan)
Takayuki Miyagawa, Sumitomo Chemical Co. (Japan)
Satoshi Yamaguchi, Sumitomo Chemical Co. (Japan)
Kenji Takahashi, Sumitomo Chemical Co. (Japan)
Shinji Konishi, Sumitomo Chemical Co. (Japan)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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