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Proceedings Paper

Fabrication of UV devices on various plane substrates
Author(s): Motoaki Iwaya; Takeshi Kawashima; Kazuyoshi Iida; Akira Honshio; Yasuto Miyake; Hideki Kasugai; Krishnan Balakrishnan; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki
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Paper Abstract

We have fabricated UV-emitters such as UV-light emitting diode (UV-LED) and UV-laser diode (UV-LD) on sapphire substrates. The combination of low-temperature-deposited AlN interlayer and lateral seeding epitaxy (Hetero-ELO) yielded crack-free and low-dislocation-density AlGaN. The light output power of GaN/AlGaN multi-quantum wells active layer based UV-LED monotonically decreased with the increase of threading dislocations. Moreover, we have demonstrated a UV-LD grown on this low-dislocation-density AlGaN. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm. We also present violet and UV-LEDs grown on ZrB2 substrate. The violet LED exhibits excellent linearity of L-I characteristic and sharp single spectrum, and vertical conduction through nitride and ZrB2 interface has been confirmed in the UV-LED. We also present the growth of AlN single crystals by sublimation method.

Paper Details

Date Published: 1 April 2005
PDF: 15 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597124
Show Author Affiliations
Motoaki Iwaya, Meijo Univ. (Japan)
Takeshi Kawashima, Meijo Univ. (Japan)
Kazuyoshi Iida, Meijo Univ. (Japan)
Akira Honshio, Meijo Univ. (Japan)
Yasuto Miyake, Meijo Univ. (Japan)
Hideki Kasugai, Meijo Univ. (Japan)
Krishnan Balakrishnan, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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