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Proceedings Paper

Characteristics of MOCVD-grown dilute-nitride quantum well lasers
Author(s): Luke J. Mawst; Jeng-Ya Yeh; T. Van Roy; Nelson Tansu
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Paper Abstract

Wide stripe and single-mode ridge guide dilute nitride quantum well lasers exhibit high performance in the 1.3 micron wavelength region. Optimizing the MOCVD growth of InGaAsN has yielded devices displaying reduced temperature sensitivity compared with conventional InP-based structures. Current annealing effects in InGaAsN QW lasers are minimized through the use of a nitrogen only cool down after growth of the laser structure. Device studies reveal the impact of nitrogen content and quantum well barrier materials on the optical gain, carrier confinement, and laser characteristics. Extension of the emission wavelength in MOCVD grown structures remains challenging. Higher N content results in a significant increase in threshold current density and higher temperature sensitivity.

Paper Details

Date Published: 1 April 2005
PDF: 12 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597123
Show Author Affiliations
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Jeng-Ya Yeh, Univ. of Wisconsin/Madison (United States)
T. Van Roy, Univ. of Wisconsin/Madison (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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