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Proceedings Paper

GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-µm range
Author(s): Yves Rouillard; J. Angellier; A. Salhi; P. Grech; France Chevrier
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Paper Abstract

We review here our results concerning laser diodes emitting at 2.38 µm and 2.60 μm. We present an original method allowing to determine the monomolecular, radiative and Auger recombination coefficients A, B and C, as well as the transparency carrier density Ntr, the internal loss αi and the gain coefficient go from the differential efficiency and the threshold current density obtained with different laser diodes. We show how these parameters can be used to optimize the number of quantum wells and explain the differences existing between laser diodes emitting at 2.38 and 2.60 μm. At 2.38 μm, we obtained a threshold current density of 76 A/cm2 with a single quantum well laser diode and at 2.60 μm, a Jth of 152 A/cm2 with a double quantum well laser diode. These threshold current densities can be compared favorably to the best reported values in the 0.85-3.0 mu;m range.

Paper Details

Date Published: 1 April 2005
PDF: 10 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597118
Show Author Affiliations
Yves Rouillard, CEM2, CNRS, Univ. Montpellier II (France)
J. Angellier, CEM2, CNRS, Univ. Montpellier II (France)
A. Salhi, CEM2, CNRS, Univ. Montpellier II (France)
P. Grech, CEM2, CNRS, Univ. Montpellier II (France)
France Chevrier, CEM2, CNRS, Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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