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Proceedings Paper

Dilute nitride type-II 'W' quantum well lasers for the near-infrared and mid-infrared
Author(s): Jerry R. Meyer; Igor Vurgaftman; Anish A. Khandekar; B. E. Hawkins; J. Y. Yeh; Luke J. Mawst; Thomas F. Kuech; Nelson Tansu
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Paper Abstract

Dilute nitride type-II "W" structures have potential for lasing at 1.55 microns (on GaAs substrates) and in the mid-infrared (3-6 microns, on InP substrates). The former active regions utilize (In)GaAsN/GaAsSb/(In)GaAsN/GaAs quantum wells, whereas the latter are based on InAsN/GaAsSb/InAsN/GaInP structures. Following a review of the theoretical rationale, we will present some preliminary MOCVD growth results for the GaAs-based type-II structures, along with their characterization by x-ray, TEM, and photoluminescence. The experimental energy gaps corresponding to the layer compositions determined from characterization are in good agreement with calculations based on the 10-band k×p formalism.

Paper Details

Date Published: 1 April 2005
PDF: 11 pages
Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); doi: 10.1117/12.597115
Show Author Affiliations
Jerry R. Meyer, Naval Research Lab. (United States)
Igor Vurgaftman, Naval Research Lab. (United States)
Anish A. Khandekar, Univ. of Wisconsin/Madison (United States)
B. E. Hawkins, Univ. of Wisconsin/Madison (United States)
J. Y. Yeh, Univ. of Wisconsin/Madison (United States)
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Thomas F. Kuech, Univ. of Wisconsin/Madison (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 5738:
Novel In-Plane Semiconductor Lasers IV
Carmen Mermelstein; David P. Bour, Editor(s)

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