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Proceedings Paper

Back-illuminated solar-blind photodetectors for imaging applications
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Paper Abstract

Back-illuminated solar-blind ultraviolet p-i-n photodetectors and focal plane arrays are investigated. We initially study single-pixel devices and then discuss the hybridization to a read-out integrated circuit to form focal plane arrays for solar-blind UV imaging. The photodetectors consist of an AlGaN p-i-n active region grown atop a high quality AlN template layer with a ~1 μm thick Al0.5Ga0.5N:Si-In co-doped low-resistance UV-transparent lateral conduction layer. The material is processed into a 320 x 256 array of 25 μm x 25 μm pixels using standard lithographic techniques. Typical pixels demonstrate a peak responsivity of 93 mA/W at 278 nm; this corresponds to an external quantum efficiency of 42%. The uniformity of the array is discussed, and a selection of sample images from the solar-blind focal plane array is included. In addition, recent attempts to achieve shorter wavelength deep UV back-illuminated p-i-n photodetector and focal plane arrays are also discussed.

Paper Details

Date Published: 25 March 2005
PDF: 10 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597077
Show Author Affiliations
Ryan McClintock, Northwestern Univ. (United States)
Alireza Yasan, Northwestern Univ. (United States)
Kathryn Mayes, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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