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Proceedings Paper

GaInAs/InP nanopillar arrays for long wavelength infrared detection
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Paper Abstract

Nanopillar devices have been fabricated from GaInAs/InP QWIP material grown by MOCVD. Using electron beam lithography and reactive ion etching techniques, large, regular arrays of nanopillars with controllable diameters ranging from 150 nm to less than 40 nm have been reproducibly formed. Photoluminescence experiments demonstrate a strong peak wavelength blue shift for nanopillar structures compared to the as-grown quantum well material. Top and bottom metal contacts have been realized using a polyimide planarization and etchback procedure. I-V and noise measurements have been performed. Optical measurements indicate photoconductive response in selected nanopillar arrays. Device peak wavelength response occurs at about 8 μm with peak device responsivity of 420 mA/W. Peak detectivity of 3×108 cmHz1/2/W has been achieved at -1V bias and 30 K.

Paper Details

Date Published: 25 March 2005
PDF: 8 pages
Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); doi: 10.1117/12.597073
Show Author Affiliations
Aaron Gin, Northwestern Univ. (United States)
Yajun Wei, Northwestern Univ. (United States)
Andrew Hood, Northwestern Univ. (United States)
Darin Hoffman, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 5732:
Quantum Sensing and Nanophotonic Devices II
Manijeh Razeghi; Gail J. Brown, Editor(s)

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