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Proceedings Paper

Radiation transport modeling for Xe and Sn-doped droplet laser-plasma sources
Author(s): Moza Al-Rabban; Christian Keyser; Simi George; Howard Scott; Vivek Bakshi; Martin Richardson
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Paper Abstract

Detailed understanding of the complex UTA emission from Xe and Sn laser plasmas is imperative to the development of efficient 13.5 nm sources for EUVL. We are developing a comprehensive theoretical modeling approach to these sources, utilizing state-of-the-art hydrodynamic and radiation transport plasma codes. These models are specifically applied to Xe and Sn-doped microscopic droplet targets laser-plasmas irradiated with nanosecond laser pulses. The plasma expansion models are compared to experimental determinations of the plasma electron density distributions. The output of the radiation transport code is used to interpret details of the spectral emission measured from these plasmas over a broad range of parameters.

Paper Details

Date Published: 6 May 2005
PDF: 10 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.596767
Show Author Affiliations
Moza Al-Rabban, Qatar Univ. (Qatar)
Christian Keyser, Naval Research Lab. (United States)
Simi George, CREOL and FPCE, College of Optics and Photonics/Univ. of Central Florida (United States)
Howard Scott, Lawrence Livermore National Lab. (United States)
Vivek Bakshi, SEMATECH (United States)
Martin Richardson, CREOL and FPCE, College of Optics and Photonics/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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