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Proceedings Paper

Through-hole processing of aluminum nitride and silicon wafers using short-pulse lasers
Author(s): Kyoichi Deki; Masaki Kanai; Hiroyuki Takizawa; Fumiaki Matsuoka; Takashi Arisawa
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Paper Abstract

Compact short pulse (200 - 350 ps) laser systems using SBS and SRS pulse compression techniques have been constructed. Fine processing of aluminum nitride and silicon wafer has been studied by using these laser pulses and compared with the results processed by 60 femto second laser system. Through-holes are formed on wafers by irradiation of the laser pulses, and the relationship between hole shapes and the processing conditions has been studied. The hole shape relates with the focusing length of the lens, laser fluence, pulse width and the wave length. Trepanning technique has been examined also to improve the hole shape. The result is quite.

Paper Details

Date Published: 8 October 2004
PDF: 5 pages
Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596745
Show Author Affiliations
Kyoichi Deki, Ariake National College of Technology (Japan)
Masaki Kanai, Osaka Univ. (Japan)
Hiroyuki Takizawa, Tokyo Cathode Lab. Co., Ltd. (Japan)
Fumiaki Matsuoka, Japan Atomic Energy Research Institute (Japan)
Takashi Arisawa, Japan Atomic Energy Research Institute (Japan)


Published in SPIE Proceedings Vol. 5662:
Fifth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Henry Helvajian; Kazuyoshi Itoh; Kojiro F. Kobayashi; Andreas Ostendorf; Koji Sugioka, Editor(s)

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