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Proceedings Paper

Ultra-broadband THz field detection by ion-implanted III-V PC antenna (Invited Paper)
Author(s): Ci-Ling Pan
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Paper Abstract

The photoconductive (PC) antenna fabricated on arsenic-ion-implanted GaAs (GaAs:As+) and proton-bombarded InP (InP:H+) substrates are shown to have a useful detection bandwidths beyond 30 THz. This is comparable to that of the reference LT-GaAs PC antenna. The signal-to-noise ratio of these ion-implanted III-V PC antennas are, however, worse than that of the LT-GaAs devices because of the higher stray currents of the former under illumination. Ion-implanted III-V PC antennas are nevertheless attractive because the implanters are widely available, process parameters well-established and compatible with the IC industry. Implantations in selective areas are also straight forward. Our results suggest that ion-implanted III-V material can be a good choice as substrate or THz PC antennas, if the resistivity is increased by a proper annealing process and/or optimizing the implantation recipe.

Paper Details

Date Published: 13 April 2005
PDF: 8 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.596668
Show Author Affiliations
Ci-Ling Pan, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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