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Proceedings Paper

Backside sample preparation with laser-enhanced chemical etching for infrared photon imaging
Author(s): Qin Deng; Zhihong Mai; Ran He; Tawei Tao; Jeffrey Lam; Yongfeng Lu
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Paper Abstract

Backside sample preparation has been widely used in failure analysis of integrated circuits (IC). Conventional backside sample preparation methodologies include mechanical grinding, parallel polishing, chemical etching with mask, etc. The mechanical grinding or polishing could induce mechanical damage in the Si. Normally the thickness after sample preparation with mechanical methods is about 100 um and above. Chemical etching can be applied to get thinner sample, e.g., less than 30 um and below. For a sample with thickness less than 30 um, mechanical support is needed. In order to make selective etching on substrates, a patterned mask has to be applied on the sample. In this paper, we will present a new methodology for backside sample preparation, which uses laser-enhanced chemical etching to open a trench on Si from the backside. This methodology can get thinner backside sample with strong mechanical support from the substrate.

Paper Details

Date Published: 12 April 2005
PDF: 4 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.596665
Show Author Affiliations
Qin Deng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Zhihong Mai, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Ran He, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Tawei Tao, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Jeffrey Lam, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Yongfeng Lu, Univ. of Nebraska/Lincoln (United States)


Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; David B. Geohegan; Friedrich G. Bachmann; Willem Hoving; Frank Träger; Peter R. Herman; Jan J. Dubowski; Tatsuo Okada; Kunihiko Washio; Yongfeng Lu; Craig B. Arnold, Editor(s)

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