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Proceedings Paper

Characterization analysis study of µ-bridge defect using simulation and wafer inspection tools
Author(s): Tae-yong Lee; Byoung-ho Lee; Soo-bok Chin; Do-hyun Cho; Chang-lyong Song; Jorge P. Fernandez; Domingo Choi; Luca Grella
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Paper Abstract

As the design rules of semiconductor devices continue to decrease, the detection of critical killer defects has become more difficult. In this paper, μ-bridge defects are studied. In order to detect special μ-bridges, both direct inspection and simulation techniques were employed. The inspection technologies used include brightfield, darkfield, and electron-beam inspection (EBI) tools, while the simulation analysis uses charge calculations and Monte Carlo scattering simulation. Special μ-bridge defects were only captured by the EBI tool and verified by focused ion beam (FIB) milling. This result corresponds to simulation data.

Paper Details

Date Published: 10 May 2005
PDF: 9 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.596473
Show Author Affiliations
Tae-yong Lee, Samsung Electronics Co., Ltd. (South Korea)
Byoung-ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Soo-bok Chin, Samsung Electronics Co., Ltd. (South Korea)
Do-hyun Cho, Samsung Electronics Co., Ltd. (South Korea)
Chang-lyong Song, Samsung Electronics Co., Ltd. (South Korea)
Jorge P. Fernandez, KLA-Tencor Corp. (United States)
Domingo Choi, KLA-Tencor Corp. (United States)
Luca Grella, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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