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Proceedings Paper

320x240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging
Author(s): Tara Martin; Peter Dixon; Mari-Anne Gagliardi; Navneet Masaun
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Paper Abstract

We report on the recent production release of our 320x240 pixel InGaAs/InP focal plane array and camera for visible and short-wavelength infrared light imaging. For this camera, we have fabricated a substrate-removed backside-illuminated InGaAs/InP photodiode array hybridized to a silicon read out integrated circuit (ROIC). Removing the InP substrate from the focal plane array allows visible wavelengths, which would otherwise be absorbed by the InP substrate due to its 920 nm wavelength cut-off, to reach the pixels’ active region. Quantum efficiency is approximately 15% at 500 nm, 70% at 850 nm, 85% at 1310 nm and 80% at 1550 nm. This focal plane array is useable for visible imaging as well as imaging eye-safe lasers and is of particular interest for day and low light level imaging as well as hyperspectral imaging.

Paper Details

Date Published: 7 April 2005
PDF: 7 pages
Proc. SPIE 5726, Semiconductor Photodetectors II, (7 April 2005); doi: 10.1117/12.596409
Show Author Affiliations
Tara Martin, Sensors Unlimited Inc. (United States)
Peter Dixon, Sensors Unlimited Inc. (United States)
Mari-Anne Gagliardi, Sensors Unlimited Inc. (United States)
Navneet Masaun, Sensors Unlimited Inc. (United States)

Published in SPIE Proceedings Vol. 5726:
Semiconductor Photodetectors II
Marshall J. Cohen; Eustace L. Dereniak, Editor(s)

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