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Proceedings Paper

Excimer laser annealing of ferroelectric SrBi2Ta2O9 thin films prepared by metal organic chemical vapor deposition
Author(s): Satoko Kato; Kyohei Funatsu; Osamu Kato; Shoji Kanazawa; Kazuya Sano
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Paper Abstract

(103) preferentially oriented ferroelectric SrBi2Ta2O9 (SBT) thin films were sequentially prepared after depositing bismuth (Bi) seeding layers at 600°C on to the (111) oriented Pt/Ti/SiO2/Si substrates by metal organic chemical vapor deposition (MOCVD). The SBT films with Bi seeding layers showed stronger (103) orientation than those without the Bi seeding layer. Then, the (103) oriented SBT films were irradiated by the excimer laser annealing system (ELA) with line beam (0.4 mm x 200 mm) in order to improve the crystallinity. The surface roughness (Ra) and gradient angle (Δa) of the SBT films irradiated by the excimer laser drastically decreased to Ra = 2.27 nm, Δa = 7.17∠ in comparison with those of as deposited films of Ra = 8.15 nm, Δa = 18.17∠, respectively. The breakdown voltage (abrupt jump of leakage current) with irradiated films was significantly improved to 5 V compared with that of as deposited films of 2V.

Paper Details

Date Published: 8 October 2004
PDF: 6 pages
Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596405
Show Author Affiliations
Satoko Kato, Japan Steel Works, Ltd. (Japan)
Kyohei Funatsu, Japan Steel Works, Ltd. (Japan)
Osamu Kato, Japan Steel Works, Ltd. (Japan)
Shoji Kanazawa, Japan Steel Works, Ltd. (Japan)
Kazuya Sano, Japan Steel Works, Ltd. (Japan)


Published in SPIE Proceedings Vol. 5662:
Fifth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Henry Helvajian; Kazuyoshi Itoh; Kojiro F. Kobayashi; Andreas Ostendorf; Koji Sugioka, Editor(s)

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