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Proceedings Paper

Room-temperature fabrication of B-FeSi2 microprecipitates by pulsed laser deposition
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Paper Abstract

We have developed a room-temperature fabrication process for β-FeSi2 microprecipitates through the active use of droplets generated by pulsed laser deposition. The droplets generated by KrF excimer laser ablation of an α-FeSi2 metallic target were characterized by micro-Raman spectroscopy with a spatial resolution of 1 μm and X-ray diffraction measurements. As a result, it was confirmed that the micron-sized droplets precipitated as the β-FeSi2 semiconducting phase on silicon and silica glass substrates maintained even at room temperature, whereas the rest of the deposited film was amorphous. It was also found that films containing a high density of β-FeSi2 microprecipitates exhibited 1.55 μm photoluminescence at low temperature after annealing at 800°C for 6 h in an argon atmosphere.

Paper Details

Date Published: 8 October 2004
PDF: 6 pages
Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596386
Show Author Affiliations
Aiko Narazaki, National Institute of Advanced Industrial Science and Technology (Japan)
Tadatake Sato, National Institute of Advanced Industrial Science and Technology (Japan)
Yoshizo Kawaguchi, National Institute of Advanced Industrial Science and Technology (Japan)
Hiroyuki Niino, National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 5662:
Fifth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Henry Helvajian; Kazuyoshi Itoh; Kojiro F. Kobayashi; Andreas Ostendorf; Koji Sugioka, Editor(s)

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