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Proceedings Paper

Pulsed laser-induced electrical-current joule heating for crystallization of silicon thin films
Author(s): Nobuyuki Andoh; Toshiyuki Sameshima
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Paper Abstract

50 nm-amorphous silicon films were crystallized by the pulsed laser-induced electrical-current joule heating method. Holes with diameter of 6 μm were formed within silicon strips, in order to control the position of the formation of crystalline grains. Large crystalline grains of 10 μm were formed between the holes in lateral direction from the observation of the photograph of the optical microscopy. Two dimensional heat flow simulation suggested that a temperature gradient was the ~1 x 105 K/cm.

Paper Details

Date Published: 8 October 2004
PDF: 6 pages
Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596359
Show Author Affiliations
Nobuyuki Andoh, Tokyo Univ. of Agriculture and Technology (Japan)
Toshiyuki Sameshima, Tokyo Univ. of Agriculture and Technology (Japan)


Published in SPIE Proceedings Vol. 5662:
Fifth International Symposium on Laser Precision Microfabrication
Isamu Miyamoto; Henry Helvajian; Kazuyoshi Itoh; Kojiro F. Kobayashi; Andreas Ostendorf; Koji Sugioka, Editor(s)

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