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Proceedings Paper

The structure and physical properties of ultra-thin multi-element Si pin photodiode arrays for medical imaging applications
Author(s): Bernd Tabbert; Chris Hicks; Ed Bartley; Hong Wu; Ilja Goushcha; Richard Metzler; Alexander O. Goushcha
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Paper Abstract

Key features of a novel pin photodiode array structure built on 30-μm, 75-μm, and 100-μm thick single Silicon dies are discussed for the first time. Results of comparative studies of opto-electrical properties for a wide range of element sizes from ~ 200 μm square to ~ 1 mm square with the gaps between the adjacent elements as small as <20 μm are presented. The internal quantum efficiency was close to 100%, crosstalk was smaller than 0.01% within the spectral range 400 to 800 nm. The crosstalk remained lower than 0.1% even in the case when the illuminated element was electrically isolated (open contact). Furthermore very low leakage current and high shunt resistance (above 1 GΩ) are characteristic for these devices. The results are imperative for creating of high quality imaging systems.

Paper Details

Date Published: 20 April 2005
PDF: 9 pages
Proc. SPIE 5745, Medical Imaging 2005: Physics of Medical Imaging, (20 April 2005); doi: 10.1117/12.595414
Show Author Affiliations
Bernd Tabbert, Semicoa (United States)
Chris Hicks, Semicoa (United States)
Ed Bartley, Semicoa (United States)
Hong Wu, Semicoa (United States)
Ilja Goushcha, Semicoa (United States)
Richard Metzler, Semicoa (United States)
Alexander O. Goushcha, Semicoa (United States)


Published in SPIE Proceedings Vol. 5745:
Medical Imaging 2005: Physics of Medical Imaging
Michael J. Flynn, Editor(s)

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