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Proceedings Paper

The challenge of high-volume 193-nm semiconductor manufacturing
Author(s): U. P. Schroder; S. Poelders; T. Fischer; K. Schumacher; A. Kiss; A. Frangen; D. Nees; M. Kubis; G. Erley; B. Janke
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Paper Abstract

This paper discusses a variety of issues encountered in 193nm lithography high volume production. In order to debug the new 193nm technology, a layer from an older qualified technology was qualified on the new tools. Tool statistics were benchmarked against the installed 248nm tool base. Several issues not known from 248nm lithography or from low volume R&D type pilot runs on 193nm were uncovered. Specifically, issues related to aging of optical parts, defects from various sources, track processing, and masks are discussed.

Paper Details

Date Published: 12 May 2004
PDF: 8 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.594628
Show Author Affiliations
U. P. Schroder, Infineon Technologies North America (United States)
S. Poelders, Infineon Technologies SC300 GmbH & Co. (Germany)
T. Fischer, Infineon Technologies SC300 GmbH & Co. (Germany)
K. Schumacher, Infineon Technologies SC300 GmbH & Co. (Germany)
A. Kiss, Infineon Technologies SC300 GmbH & Co. (Germany)
A. Frangen, Infineon Technologies SC300 GmbH & Co. (Germany)
D. Nees, Infineon Technologies SC300 GmbH & Co. (Germany)
M. Kubis, Infineon Technologies SC300 GmbH & Co. (Germany)
G. Erley, Infineon Technologies SC300 GmbH & Co. (Germany)
B. Janke, Infineon Technologies SC300 GmbH & Co. (Germany)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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