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Proceedings Paper

Scope for electric field assisted removal of ablated debris from laser machined features in silicon
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Paper Abstract

The problem created by the re-deposition of ablated material when laser machining structures in silicon wafers is investigated. The study focuses on the specific case of machining wafer grade silicon with femtosecond pulses centered at a wavelength of 775 nm. Based on the evidence that a highly ionised plasma state exists immediately after laser ablation, this work explores the potential of using electric fields to channel the debris out of the laser machined feature before it becomes deposited. To this extent the work discusses the step-by-step development of different experimental arrangements, by first evaluating its effects, then identifying its limitations and finally by proposing and investigating potential solutions. It is found that a reduction in the amount of re-deposited debris is observed when a carrier-depleted region is generated in silicon materials.

Paper Details

Date Published: 12 April 2005
PDF: 10 pages
Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.594529
Show Author Affiliations
Edward Coyne, Analog Devices (Ireland)
National Univ. of Ireland/Galway (Ireland)
Paul Mannion, National Univ. of Ireland/Galway (Ireland)
Gerard M. O'Connor, National Univ. of Ireland/Galway (Ireland)
Sebastian Favre, National Univ. of Ireland/Galway (Ireland)
Thomas J. Glynn, National Univ. of Ireland/Galway (Ireland)

Published in SPIE Proceedings Vol. 5713:
Photon Processing in Microelectronics and Photonics IV
Jim Fieret; David B. Geohegan; Friedrich G. Bachmann; Willem Hoving; Frank Träger; Peter R. Herman; Jan J. Dubowski; Tatsuo Okada; Kunihiko Washio; Yongfeng Lu; Craig B. Arnold, Editor(s)

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