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Proceedings Paper

Nonresonant random lasing from a dye-doped smectic A* scattering device
Author(s): Stephen M. Morris; Alison D. Ford; Mikhail N. Pivnenko; Harry James Coles
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Paper Abstract

Nonresonant random lasing from a dye-doped smectic A* scattering device is demonstrated. The field-induced scattering state of a low molar mass liquid crystal in the smectic A* phase is found to provide sufficient feedback to generate random lasing when a gain material, such as a fluorescent dye, is doped into the liquid crystal host. Furthermore, we found that the emission intensity of the random laser at a given excitation energy can be adjusted by altering the strength of the applied electric field so as to modify the scattering texture and consequently the transport mean free path. This change in the transport mean free path results in a change in the random lasing threshold. Large values for the transport mean free path, which indicate a weak scattering strength, result in large threshold values and vice-versa. Finally, we discuss the benefits of controlling the scattering strength with an applied electric field in terms of potential device applications.

Paper Details

Date Published: 12 April 2005
PDF: 11 pages
Proc. SPIE 5741, Emerging Liquid Crystal Technologies, (12 April 2005); doi: 10.1117/12.593912
Show Author Affiliations
Stephen M. Morris, Univ. of Cambridge (United Kingdom)
Alison D. Ford, Univ. of Cambridge (United Kingdom)
Mikhail N. Pivnenko, Univ. of Cambridge (United Kingdom)
Harry James Coles, Univ. of Cambridge (United Kingdom)

Published in SPIE Proceedings Vol. 5741:
Emerging Liquid Crystal Technologies
Liang-Chy Chien, Editor(s)

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