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Proceedings Paper

Si-based optical receivers
Author(s): Joe C. Campbell; Jungwoo Oh; Zhihong Huang
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Paper Abstract

Two Ge on Si photodetectors are reported: MSM photodiodes with an amorphous Ge layer to increase the Schottky barrier height and Ge/GexSi1-x/Si heterojunction photodiodes. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs has also been successfully demonstrated.

Paper Details

Date Published: 7 March 2005
PDF: 9 pages
Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.593538
Show Author Affiliations
Joe C. Campbell, The Univ. of Texas/Austin (United States)
Jungwoo Oh, The Univ. of Texas/Austin (United States)
Zhihong Huang, The Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 5730:
Optoelectronic Integration on Silicon II
Joel A. Kubby; Ghassan E. Jabbour, Editor(s)

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