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Proceedings Paper

Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography
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Paper Abstract

This paper investigates possible solutions to intensity imbalance minimization for 65nm node application through rigorous vector simulations. It provides a strategic plan to select the right technology for AAPSM application. Technologies such as undercut, bias, combination of undercut and bias and use of a Transparent Etch Stop Layer (TESL) are compared. The study looks at the effect of through pitch, defocus, phase error and sidewall profile on space CD bias for the technologies mentioned to determine the set of conditions that would provide the best compromise between performance and manufacturability. Simulations indicate the use of TESL along with undercut would provide best compromise between manufacturability and performance. Simulation results show that performance can be improved considerably by optimizing phase target. The use of vertical side walls is sufficient if the purpose of simulation is to determine trends. For more accurate simulations it is suggested that the profile used in simulation be matched to profiles seen on manufactured AAPSM.

Paper Details

Date Published: 12 May 2004
PDF: 8 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.593219
Show Author Affiliations
Tejas Jhaveri, Carnegie Mellon Univ. (United States)
Rand Cottle, Photronics Inc. (United States)
Yuan Zhang, Photronics Inc. (United States)
Christopher Progler, Photronics Inc. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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