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Proceedings Paper

Simulation of GaN/InGaN micro-ring light-emitting devices (Invited Paper)
Author(s): Vladislav Dubikovskiy; Mark C. Townsend; Robert D. Cottle
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Paper Abstract

We have extended the capabilities of the commercial device simulator ATLAS with extra models specific to the simulation of LED devices. This simulator was used to simulate the characteristics of a GaN/InGaN micro-ring light-emitting diode. These results include spectral response and output coupling efficiency

Paper Details

Date Published: 28 April 2005
PDF: 8 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.593031
Show Author Affiliations
Vladislav Dubikovskiy, Silvaco International (United States)
Mark C. Townsend, Silvaco International (United States)
Robert D. Cottle, Silvaco International (United States)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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