Share Email Print
cover

Proceedings Paper

Picosecond photoluminescence of a-Si:H/a-SiNx:H multilayers
Author(s): Xu Guang Huang; He Zhou Wang; Qingxing Li; Zhenxin Yu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The dynamics of the carrier recombination in a-Si:H/a-SiN3:H multilayers has been investigated with picosecond photoluminescence spectroscopy. The thermalization of photogenerated carriers is a direct hopping process. The decay time cutoff, the mobility edge and the bandtail width vary non-monotonously with a turning point near x=O.85, which is attributed to the changes of the build-in field and the multilayer structure with nitrogen content.

Paper Details

Date Published: 14 May 1992
PDF: 5 pages
Proc. SPIE 1636, Applied Spectroscopy in Materials Science II, (14 May 1992); doi: 10.1117/12.59299
Show Author Affiliations
Xu Guang Huang, Zhongshan Univ. (China)
He Zhou Wang, Zhongshan Univ. (China)
Qingxing Li, Zhongshan Univ. (China)
Zhenxin Yu, Zhongshan Univ. (China)


Published in SPIE Proceedings Vol. 1636:
Applied Spectroscopy in Materials Science II
William G. Golden, Editor(s)

© SPIE. Terms of Use
Back to Top