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Proceedings Paper

Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy
Author(s): W. Liang; Kong-Thon Tsen; David K. Ferry; Hai Lu; William J. Schaff
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Paper Abstract

Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.

Paper Details

Date Published: 13 April 2005
PDF: 8 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.592971
Show Author Affiliations
W. Liang, Arizona State Univ. (United States)
Kong-Thon Tsen, Arizona State Univ. (United States)
David K. Ferry, Arizona State Univ. (United States)
Hai Lu, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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