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Proceedings Paper

Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy
Author(s): W. Liang; Kong-Thon Tsen; C. Poweleit; Hadis Morkoc
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Paper Abstract

Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.

Paper Details

Date Published: 13 April 2005
PDF: 11 pages
Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.592968
Show Author Affiliations
W. Liang, Arizona State Univ. (United States)
Kong-Thon Tsen, Arizona State Univ. (United States)
C. Poweleit, Arizona State Univ. (United States)
Hadis Morkoc, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 5725:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Kong-Thon Tsen; Jin-Joo Song; Hongxing Jiang, Editor(s)

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