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Proceedings Paper

Laser chemistry relevant to III-V semiconductor growth
Author(s): Brent D. Koplitz; Xiaodong Xu; Subhash Deshmukh; Jeffrey L. Brum; Michael Dulligan; Teresa L. T. Birdwhistell
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Paper Abstract

Despite its toxicity, arsine remains a "workhorse" in the field of semiconductor research because it provides a relatively clean (i.e. carbon-free) means of delivering atomic As to a growth surface. However, the feasibility of using alternative arsenic sources is currently being investigated by the semiconductor community. Two liquid metalorganic alternatives, triethylarsenic and monoethylarsine, contain carbon that can appear as a significant impurity in the semiconductor material itself. We present results on the laser-induced photochemistry of the above compounds. Our efforts are focused on using lasers to generate and detect atomic hydrogen, a species that is known to be a good radical scavenger in growth environments. We also present results on the laser ablation of inorganic salts that may be useful as precursors for 111-V thin-film growth. Compounds such as K3Ga3As4 and K2Ga2Sb4 are irradiated with various excimer laser wavelengths, and we report on the prognosis for viable film growth using this approach.

Paper Details

Date Published: 14 May 1992
PDF: 6 pages
Proc. SPIE 1636, Applied Spectroscopy in Materials Science II, (14 May 1992); doi: 10.1117/12.59293
Show Author Affiliations
Brent D. Koplitz, Tulane Univ. (United States)
Xiaodong Xu, Tulane Univ. (United States)
Subhash Deshmukh, Tulane Univ. (United States)
Jeffrey L. Brum, Tulane Univ. (United States)
Michael Dulligan, Tulane Univ. (United States)
Teresa L. T. Birdwhistell, Tulane Univ. (United States)


Published in SPIE Proceedings Vol. 1636:
Applied Spectroscopy in Materials Science II
William G. Golden, Editor(s)

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