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Proceedings Paper

High-power master-oscillator power amplifier AlGaAs laser for intersatellite communications
Author(s): Donald M. Cornwell
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Paper Abstract

A master oscillator power amplifier (MOPA) configuration has been developed using an anti-reflection-coated AlGaAs semiconductor broad area laser in a reflective amplifier mode. For CW injection, the MOPA produced 340 mW of diffraction-limited power. The semiconductor MOPA configuration also produced peak diffraction-limited powers of 360 mW and 320 mW for quaternary pulse position Q-PPM modulation rates of 50 Mbps and 325 Mbps, respectively, for a peak injected power of 100 mW. Angular beamsteering during modulation was minimized by collimating the injected beam. The diffraction-limited peak power was limited by the frequency chirp of the master oscillator and also by the coupling losses of the injected beam.

Paper Details

Date Published: 9 June 1992
PDF: 9 pages
Proc. SPIE 1635, Free-Space Laser Communication Technologies IV, (9 June 1992); doi: 10.1117/12.59275
Show Author Affiliations
Donald M. Cornwell, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 1635:
Free-Space Laser Communication Technologies IV
David L. Begley; Bernard D. Seery, Editor(s)

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