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Proceedings Paper

Optical transitions and carrier dynamics in self-organized InAs quantum islands grown on InP(001)
Author(s): Bassem Salem; Gerard Guillot; Taha Benyattou; Catherine Bru-Chevallier; Georges Bremond; Christelle Monat; Michel Gendry; Anouar Jbeli; Xavier Marie; Thiery Amand
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Paper Abstract

The ground and excited state luminescent transitions in self-organized InAs/InP(001) quantum islands (QIs) grown in two different matrices (In0.52Al0.48As and InP), have been studied by cw photoluminescence (PL) and time resolved photoluminescence (TRPL). PL excitation (PLE) shows that the multi-component PL spectrum measured for the InAs/InAlAs QIs is associated to ground and related excited state transitions of QIs having monolayer-height fluctuation whereas for InAs/InP QIs the multi-component PL spectrum is only due to one ground state and their related excited states. This attribution is confirmed by the recombination life times measured by TRPL which are in the 1.2-1.4 ns range for the ground state transitions and in the 90-600 ps range for the excited state transitions.

Paper Details

Date Published: 4 April 2005
PDF: 4 pages
Proc. SPIE 5734, Quantum Dots, Nanoparticles, and Nanoclusters II, (4 April 2005); doi: 10.1117/12.592221
Show Author Affiliations
Bassem Salem, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Catherine Bru-Chevallier, INSA de Lyon (France)
Georges Bremond, INSA de Lyon (France)
Christelle Monat, Ecole Centrale de Lyon (France)
Michel Gendry, Ecole Centrale de Lyon (France)
Anouar Jbeli, INSA de Toulouse (France)
Xavier Marie, INSA de Toulouse (France)
Thiery Amand, INSA de Toulouse (France)

Published in SPIE Proceedings Vol. 5734:
Quantum Dots, Nanoparticles, and Nanoclusters II
Diana L. Huffaker; Pallab K. Bhattacharya, Editor(s)

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